PENGLIN 100PCS AO3400 A09T N Channel Enhancement Mode Field Effect Transistor 30V，SOT-23
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A field-effect transistor (FET) is a voltage-controlled device that uses the VGS (gate-source voltage) to control the ID (drain current); The input current of a field-effect transistor is extremely small, so its input resistance is very high. It relies on majority carriers for conduction, so it has good temperature stability The voltage gain of an amplifier circuit built with field-effect transistors is lower than that of an amplifier circuit built with bipolar transistors Field-effect transistors have high radiation resistance; since there is no shot noise caused by the random diffusion of minority carriers, they exhibit low noise.
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A field-effect transistor (FET) is a voltage-controlled device that uses the VGS (gate-source voltage) to control the ID (drain current); The input current of a field-effect transistor is extremely small, so its input resistance is very high. It relies on majority carriers for conduction, so it has good temperature stability The voltage gain of an amplifier circuit built with field-effect transistors is lower than that of an amplifier circuit built with bipolar transistors Field-effect transistors have high radiation resistance; since there is no shot noise caused by the random diffusion of minority carriers, they exhibit low noise.
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Description
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A field-effect transistor (FET) is a voltage-controlled device that uses the VGS (gate-source voltage) to control the ID (drain current); The input current of a field-effect transistor is extremely small, so its input resistance is very high. It relies on majority carriers for conduction, so it has good temperature stability The voltage gain of an amplifier circuit built with field-effect transistors is lower than that of an amplifier circuit built with bipolar transistors Field-effect transistors have high radiation resistance; since there is no shot noise caused by the random diffusion of minority carriers, they exhibit low noise.
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