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Model : IRFB4110; Continuous Drain Current Id : 180A; Drain Source Voltage Vds : 100V; Transistor polarity : P-Channel. material : The IRFB4110 mosfet transistor is made of metal oxide semiconductor material, which has good thermal stability. Advanced process technology : Transistor is a kind of precision electronic component with high input resistance, low noise, low power consumption, and a large dynamic range. Application : The IRFB4110 N-Channel mosfet transistor is a commonly used power semiconductor device in electronic circuits, which can be used as electronic switches, controllable rectifiers, etc. Multifunction : N-channel rectifier with multiple functions such as detection, rectification, amplification, switching, voltage stabilization, and signal modulation, widely used in large-scale and very large-scale integrated circuits.