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Prime Grade: premium silicon wafer suitable for semiconductor photolithography substrates, nanofabrication, and scientific research and teaching CZ Growth Method: manufactured using CZ (Czochralski) growth process, ensuring uniformity and quality Specifications: 10.16 cm diameter, 525μm thickness, individually packaged in boxes for protection Specifications: type: N; dopant: P; orientation: ; surface specifications: TIR < 3μm, TTV < 10 μm , BOW